ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS

被引：77
|
作者：
GRIMALDI, MG
PAINE, BM
NICOLET, MA
SADANA, DK
机构：
[1] CALTECH,PASADENA,CA 91125
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.329213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4038 / 4046
页数：9
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