CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY FOR IMAGING IC STRUCTURES WITH HIGH-RESOLUTION

For process optimization in semiconductor technology it is essential to have a detailed knowledge about the geometric structures of the integrated circuits in relation to depth. Because of increasing miniaturization the imaging of cross-sections with a sufficient high resolution is growing more and more difficult. When thin cross-sectional specimens (approx. 100 nm thick) are prepared for the transmission electron microscope details of the geometric structures can be imaged with both high resolution and good contrast. Moreover it is possible to observe bulk properties of the materials. A few examples of cross-sections through integrated circuits as well as a layer sequence of III-V semiconductors show the scope of information that can be obtained.