ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE

被引：76
|
作者：
BEAN, JC
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 07期
关键词：
D O I：
10.1063/1.90453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：654 / 656
页数：3
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