ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE

被引：76
|
作者：
BEAN, JC
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 07期
关键词：
D O I：
10.1063/1.90453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：654 / 656
页数：3
相关论文
共 50 条
  • [1] SI-MBE - GROWTH AND SB DOPING
    KONIG, U
    KIBBEL, H
    KASPER, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989
  • [2] Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si
    Thompson, PE
    Silvestre, C
    Twigg, M
    Jernigan, G
    Simons, DS
    THIN SOLID FILMS, 1998, 321 : 120 - 124
  • [3] Transport properties of Sb-doped Si nanowires
    Nukala, Prathyusha
    Sapkota, Gopal
    Gali, Pradeep
    Philipose, U.
    JOURNAL OF CRYSTAL GROWTH, 2012, 353 (01) : 140 - 144
  • [4] DOPING PROFILE CONTROL IN SI MBE FILM WITH SB ION DOPING
    SUGIURA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 641 - 645
  • [5] Dislocation motion in Sb-doped SiGe on Si substrate
    Yamashita, Yoshifumi
    Matsunaga, Takuya
    Funaki, Toru
    Fushimi, Tatsuya
    Kamiura, Yoichi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (10): : 1921 - 1925
  • [6] ELECTRON LOCALIZATION IN SB-DOPED SI/SIGE SUPERLATTICES
    DIETL, T
    JAROSZYNSKI, J
    SAWICKI, M
    GLOD, P
    WROBEL, J
    STOGER, G
    BRUNTHALER, G
    BAUER, G
    SCHAFFLER, F
    ACTA PHYSICA POLONICA A, 1995, 88 (04) : 699 - 702
  • [7] Highly conductive Sb-doped layers in strained Si
    Bennett, N. S.
    Cowern, N. E. B.
    Smith, A. J.
    Gwilliam, R. M.
    Sealy, B. J.
    O'Reilly, L.
    McNally, P. J.
    Cooke, G.
    Kheyrandish, H.
    APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [8] The formation of abrupt N+ doping profiles using atomic hydrogen and Sb during Si MBE
    Thompson, PE
    Silvestre, C
    Twigg, M
    Jernigan, G
    Simons, DS
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 367 - 372
  • [9] ANOMALOUS REDISTRIBUTIONS OF AS AND SB ATOMS IN AS-IMPLANTED SB-DOPED SI AND SB-IMPLANTED AS-DOPED SI DURING ANNEALING
    YOKOTA, K
    FURUTA, H
    ISHIHARA, S
    KIMURA, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 633 - 636
  • [10] ANALYSIS OF DEPOSITS EVAPORATED FROM SB-DOPED SI MELTS
    HUANG, XM
    TERASHIMA, K
    TOKIZAKI, E
    SASAKI, H
    KIMURA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3305 - 3309
12345