ANALYSIS OF GATE LEAKAGE ON MOVPE GROWN INALAS/INGAAS-HFET

被引：9
|
作者：
BUCHALI, F
HEEDT, C
PROST, W
GYURO, I
MESCHEDE, H
TEGUDE, FJ
机构：
[1] Duisburg University, D-4100 Duisburg, SFB 254
[2] Alcatel-SEL Research Center
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90462-Z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The leakage of reverse biased Schottky gates on lattice matched InAlAs/InGaAs HFET grown by MOVPE on s.i. InP subtsrates is adressed. The contribution of (i) (thermionic-) field emission across the Schottky barrier, (ii) generation-recombination in the space charge region and (iii) impact ionization with subsequent hole tunneling are identified by means of their temperature dependence. Taking the overall importance of the gate to channel potential into account we will show that the leakage in biased HFET with a doping level N(D) < 4*10(18)cm-3 is dominated by impact ionization.
引用
收藏
页码：401 / 404
页数：4
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