共 50 条
- [32] DONOR STATES IN GAAS UNDER HYDROSTATIC-PRESSURE PHYSICAL REVIEW B, 1990, 42 (18): : 11791 - 11800
- [34] Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4609 - 4615
- [36] Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4609 - 4615
- [37] TRANSFERRED ELECTRON EFFECTS IN INP UNDER HIGH-PRESSURE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (02): : L29 - L35
- [39] ELECTRON TRAPPING IN THIN OXIDE ON N-INP JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1317 - 1318