TRANSFERRED ELECTRON EFFECTS IN N-GAAS AND N-INP UNDER HYDROSTATIC-PRESSURE

被引:6
|
作者
CZUBATYJ, W
SHUR, MS
SHAW, MP
机构
关键词
D O I
10.1016/0038-1101(78)90117-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:75 / 78
页数:4
相关论文
共 50 条
  • [31] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE
    KUMAGAI, O
    WUNSTEL, K
    JANTSCH, W
    SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 89 - 92
  • [32] DONOR STATES IN GAAS UNDER HYDROSTATIC-PRESSURE
    LIU, X
    SAMUELSON, L
    PISTOL, ME
    GERLING, M
    NILSSON, S
    PHYSICAL REVIEW B, 1990, 42 (18): : 11791 - 11800
  • [33] DONOR SPECTROSCOPY IN GAAS UNDER HYDROSTATIC-PRESSURE
    GERLING, M
    LIU, X
    NILSSON, S
    PISTOL, ME
    SAMUELSON, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (04) : 257 - 259
  • [34] Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process
    Sato, Taketomo
    Kasai, Seiya
    Okada, Hiroshi
    Hasegawa, Hideki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4609 - 4615
  • [35] FORMATION OF A DX CENTER IN INP UNDER HYDROSTATIC-PRESSURE
    WOLK, JA
    WALUKIEWICZ, W
    THEWALT, MLW
    HALLER, EE
    PHYSICAL REVIEW LETTERS, 1992, 68 (24) : 3619 - 3622
  • [36] Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process
    Sato, T
    Kasai, S
    Okada, H
    Hasegawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4609 - 4615
  • [37] TRANSFERRED ELECTRON EFFECTS IN INP UNDER HIGH-PRESSURE
    KOBAYASHI, T
    MORI, S
    HIRATA, Y
    AOKI, K
    YAMAMOTO, K
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (02): : L29 - L35
  • [38] LEAKAGE EFFECTS IN N-GAAS MESFET WITH N-GAAS BUFFER LAYER
    WANG, YC
    BAHRAMI, M
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) : 647 - 663
  • [39] ELECTRON TRAPPING IN THIN OXIDE ON N-INP
    EFTEKHARI, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1317 - 1318
  • [40] Effect of hydrostatic pressure on series resistance of Au/n-GaAs Schottky diodes
    Çankaya, G
    Uçar, N
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2003, 41 (01) : 36 - 39