Ge composition dependence of photoluminescence properties of Si1-xGex/Si disordered superlattices

被引：4
|
作者：
Wakahara, A
Kuramoto, K
Nomura, Y
Sasaki, A
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Kyoto
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期
关键词：
SiGe; photoluminescence; molecular beam epitaxy; superlattices;
D O I：
10.1016/0921-5107(95)01354-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) properties of Si1-xGex/Si disordered superlattices (d-SLs) with various Ge compositions (x < 0.55) are studied. Thermal quenching properties and excitation power dependence of PL properties are investigated for the estimation of the disorder strength and for the assignment of the luminescence process, respectively. The red-shift energy of PL peak, PL intensity ratio I(d-SL)/I(o-SL), and the characteristic temperature T-0 become large by increasing the Ge composition. Improvement of the PL properties are owing to the strong hole localization effect.
引用
收藏
页码：479 / 484
页数：6
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