DEPOSITION OF INP ON GAAS SUBSTRATES IN THE INP-PCL3-H2 SYSTEM

被引：0
|
作者：
WAGNER, G
KUHN, G
NEUMANN, H
NOWAK, E
机构：
[1] KARL MARX UNIV,FACHBEREICH KRISTALLOG,SEKT CHEM,DDR-7030 LEIPZIG,GER DEM REP
[2] KARL MARX UNIV,SEKT PHYS,DDR-7010 LEIPZIG,GER DEM REP
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1981年 / 16卷 / 07期
关键词：
D O I：
10.1002/crat.2170160702
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：751 / 757
页数：7
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