METHOD FOR INTEGRATED CIRCUITS TOTAL IONIZING DOSE HARDNESS TESTING BASED ON COMBINED GAMMA-AND X-RAY IRRADIATION FACILITIES

被引：20
|
作者：
Sogoyan, Armen V. [1 ,2 ]
Artamonov, Alexey S. [1 ,2 ]
Nikiforov, Alexander Y. [1 ,2 ]
Boychenko, Dmitry V. [1 ,2 ]
机构：
[1] Natl Res Nucl Univ MEPhI, Moscow, Russia
[2] JSC Specialized Elect Syst SPELS, Moscow, Russia
来源：
FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2014年 / 27卷 / 03期
关键词：
microelectronics; TID effects; gamma-ray; X-ray;
D O I：
10.2298/FUEE1403329S
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma-and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.
引用
收藏
页码：329 / 338
页数：10
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