GALLIUM-ARSENIDE EPITAXY IN SILICON SUBSTRATE WINDOWS

被引：0

作者：

OSINSKII, VI

KATSAPOV, FM

机构：

来源：

DOKLADY AKADEMII NAUK BELARUSI | 1978年 / 22卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：123 / 126

页数：4

共 50 条

[11] HETEROEPITAXY OF GALLIUM-ARSENIDE ON SILICON
PRESNOV, VA
KAZAKOV, AI
BROVKIN, VN
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[12] GALLIUM-ARSENIDE VAPOR-PHASE EPITAXY
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ACTA ELECTRONICA, 1978, 21 (02): : 117 - 127
[13] LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE
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[14] VAPOR-PHASE EPITAXY OF GALLIUM-ARSENIDE
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REPORT OF NRL PROGRESS, 1973, (FEB): : 36 - 37
[15] EMBEDDED MOLECULAR-BEAM EPITAXY FOR A COPLANAR GALLIUM-ARSENIDE ON SILICON TECHNOLOGY
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LIANG, JB
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[16] INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[17] SILICON GALLIUM-ARSENIDE HETEROJUNCTIONS PREPARED BY THE METHOD OF MOLECULAR-BEAM EPITAXY
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SADOFEV, YG
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[18] STRUCTURAL CHARACTERIZATION OF EMBEDDED GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY
DEBOECK, J
LIANG, JB
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[19] RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
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[20] A SILICON SOLUTION FOR GALLIUM-ARSENIDE ICS
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