首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
EPITAXIAL FILMS OF GALLIUM ARSENIDE
被引:0
|
作者
:
HAGENLOCHER, A
论文数:
0
引用数:
0
h-index:
0
HAGENLOCHER, A
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1961年
/ 108卷
/ 09期
关键词
:
D O I
:
暂无
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:C213 / C213
页数:1
相关论文
共 50 条
[21]
CATHODOLUMINESCENCE RELAXATION TIMES OF SINGLE CRYSTALS AND EPITAXIAL FILMS OF GALLIUM ARSENIDE
VLASOV, AN
论文数:
0
引用数:
0
h-index:
0
VLASOV, AN
KURBATOV, LN
论文数:
0
引用数:
0
h-index:
0
KURBATOV, LN
SOROKONO.NV
论文数:
0
引用数:
0
h-index:
0
SOROKONO.NV
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1971,
5
(06):
: 1072
-
&
[22]
EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE
RAICHOUDBURY, P
论文数:
0
引用数:
0
h-index:
0
RAICHOUDBURY, P
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1745
-
+
[23]
MULTIPLE TWINS IN EPITAXIAL GALLIUM ARSENIDE
HOLLOWAY, H
论文数:
0
引用数:
0
h-index:
0
HOLLOWAY, H
BOBB, LC
论文数:
0
引用数:
0
h-index:
0
BOBB, LC
JOURNAL OF APPLIED PHYSICS,
1967,
38
(06)
: 2711
-
&
[24]
Use of epitaxial gallium arsenide in detectors
V. M. Zaletin
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
V. M. Zaletin
Yu. V. Tuzov
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
Yu. V. Tuzov
V. F. Dvoryankin
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
V. F. Dvoryankin
A. A. Sokolovskii
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physicotechnical Problems,Institute of Radio Engineering and Electronics
A. A. Sokolovskii
Atomic Energy,
2007,
103
: 901
-
905
[25]
EPITAXIAL GALLIUM-ARSENIDE GROWTH
不详
论文数:
0
引用数:
0
h-index:
0
不详
ELECTRONIC ENGINEERING,
1979,
51
(627):
: 10
-
10
[26]
PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE
MARUYAMA, M
论文数:
0
引用数:
0
h-index:
0
MARUYAMA, M
KIKUCHI, S
论文数:
0
引用数:
0
h-index:
0
KIKUCHI, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: C66
-
&
[27]
Use of epitaxial gallium arsenide in detectors
Zaletin, V. M.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Zaletin, V. M.
Tuzov, Yu. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Tuzov, Yu. V.
Dvoryankin, V. F.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Radio Engn & Elect, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Dvoryankin, V. F.
Sokolovskii, A. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Radio Engn & Elect, Moscow 117901, Russia
Russian Acad Sci, Inst Physicotech Problems, Moscow 117901, Russia
Sokolovskii, A. A.
ATOMIC ENERGY,
2007,
103
(05)
: 901
-
905
[28]
GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE
GOLDSMITH, N
论文数:
0
引用数:
0
h-index:
0
GOLDSMITH, N
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
: 588
-
589
[29]
EPITAXIAL GALLIUM ARSENIDE AS HALL ELEMENTS
THANAILAKIS, AO
论文数:
0
引用数:
0
h-index:
0
THANAILAKIS, AO
COHEN, E
论文数:
0
引用数:
0
h-index:
0
COHEN, E
SOLID-STATE ELECTRONICS,
1969,
12
(12)
: 997
-
+
[30]
Diffusion of chromium into epitaxial gallium arsenide
M. D. Vilisova
论文数:
0
引用数:
0
h-index:
0
机构:
Siberian Physicotechnical Institute at Tomsk State University,
M. D. Vilisova
E. P. Drugova
论文数:
0
引用数:
0
h-index:
0
机构:
Siberian Physicotechnical Institute at Tomsk State University,
E. P. Drugova
I. V. Ponomarev
论文数:
0
引用数:
0
h-index:
0
机构:
Siberian Physicotechnical Institute at Tomsk State University,
I. V. Ponomarev
V. A. Chubirko
论文数:
0
引用数:
0
h-index:
0
机构:
Siberian Physicotechnical Institute at Tomsk State University,
V. A. Chubirko
Semiconductors,
2008,
42
: 238
-
241
←
1
2
3
4
5
→