MEASUREMENT TECHNIQUE FOR LARGE-SIGNAL ADMITTANCE OF IMPATT DIODES

被引：1

作者：

GROVES, IS ^{[1
]}

KENYON, ND ^{[1
]}

机构：

[1] POST OFF RES DEPT,IPSWICH IP5 7RE,ENGLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 15期

关键词：

D O I：

10.1049/el:19730239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：331 / 332

页数：2

共 50 条

[31] LARGE-SIGNAL ANALYSIS OF LO-HI-LO DOUBLE-DRIFT SILICON IMPATT DIODES AT 50 GHZ
CHANG, LC
HU, DH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) : 1137 - 1140
[32] NONLINEAR AND LARGE-SIGNAL CHARACTERISTICS OF MILLIMETER-WAVE IMPATT AMPLIFIERS
KUNO, HJ
ENGLISH, DL
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (11) : 703 - 706
[33] NONLINEAR LARGE-SIGNAL ADMITTANCE IN N-GAAS DIODES AT TERAHERTZ FREQUENCIES BASED UPON TRANSPORT ANALYSIS
KROWNE, CM
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2160 - 2163
[34] A TECHNIQUE FOR THE LARGE-SIGNAL CHARACTERIZATION OF TRANSISTORS
TSANG, KF
YIP, PCL
MORGAN, GB
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1992, 5 (10) : 516 - 517
[35] LARGE SIGNAL ANALYSIS OF ABRUPT JUNCTION SILICON IMPATT DIODES
THOMSON, I
INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (02) : 121 - &
[36] Large-signal modeling method for power FETs and diodes
孙璐
王家礼
王珊
李雪铮
石慧
王娜
郭生平
半导体学报, 2009, 30 (06) : 57 - 60
[37] LARGE-SIGNAL MODULATION OF GaAs LASER DIODES.
Schicketanz, Dieter
Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1975, 4 (06): : 325 - 330
[38] Large-signal modeling method for power FETs and diodes
Sun Lu
Wang Jiali
Wang Shan
Li Xuezheng
Shi Hui
Wang Na
Guo Shengping
JOURNAL OF SEMICONDUCTORS, 2009, 30 (06)
[39] Large-signal dynamics of resonant-tunneling diodes
Ourednik, P.
Picco, G.
Nguyen, D. Tuan
Spudat, C.
Feiginov, M.
JOURNAL OF APPLIED PHYSICS, 2023, 133 (01)
[40] LARGE-SIGNAL NOISE, FREQUENCY CONVERSION, AND PARAMETRIC INSTABILITIES IN IMPATT DIODE NETWORKS
HINES, ME
PROCEEDINGS OF THE IEEE, 1972, 60 (12) : 1534 - 1548

← 1 2 3 4 5 →