A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF ALAS/GAAS TILTED SUPERLATTICE GROWTH BY MIGRATION-ENHANCED EPITAXY

被引：19

作者：

CHALMERS, SA ^{[1
]}

GOSSARD, AC ^{[1
]}

PETROFF, PM ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：431 / 435

页数：5

共 50 条

[41] Growth of ZnSe/GaAs superlattices by migration-enhanced epitaxy
Kobayashi, Naoki, 1600, (29):
[42] GROWTH OF ZNSE/GAAS SUPERLATTICES BY MIGRATION-ENHANCED EPITAXY
KOBAYASHI, N
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (02): : L236 - L239
[43] THE EFFECT OF REFRACTION IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
GRIESCHE, J
JOURNAL OF CRYSTAL GROWTH, 1995, 149 (1-2) : 141 - 142
[44] A STUDY OF AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
DONG, HK
LIANG, BW
HO, MC
HUNG, S
TU, CW
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 181 - 185
[45] REAL-TIME STUDY OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY DURING ATOMIC LAYER EPITAXY OF GAAS
MAA, BY
DAPKUS, PD
CHEN, P
MADHUKAR, A
APPLIED PHYSICS LETTERS, 1993, 62 (20) : 2551 - 2553
[46] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GROWTH OF NIO AND COO THIN-FILMS BY MOLECULAR-BEAM EPITAXY
PEACOR, SD
HIBMA, T
SURFACE SCIENCE, 1994, 301 (1-3) : 11 - 18
[47] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF SB INCORPORATION DURING MOLECULAR-BEAM EPITAXY GROWTH OF GASB AND ALSB
WATERMAN, JR
SHANABROOK, BV
WAGNER, RJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 895 - 897
[48] A STUDY OF METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF INAS BY MASS-SPECTROMETRY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
LIANG, BW
CHIN, TP
WANG, LY
TU, CW
JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 240 - 243
[49] EXTRINSIC EFFECTS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS FROM MBE GAAS
PUKITE, PR
VANHOVE, JM
COHEN, PI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 243 - 248
[50] THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON GAAS(100) STUDIED BY INSITU SCANNING TUNNELING MICROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
SNYDER, CW
BARLETT, D
ORR, BG
BHATTACHARYA, PK
SINGH, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2189 - 2193

← 1 2 3 4 5 →