INFLUENCE OF DIELECTRONIC RECOMBINATION ON GAIN OF X-RAY LASERS WITH LI-LIKE IONS

被引：0

作者：

STANCALIE, V ^{[1
]}

SUREAU, A ^{[1
]}

KLISNICK, A ^{[1
]}

MOLLER, C ^{[1
]}

GUENNOU, H ^{[1
]}

BERETE, Y ^{[1
]}

机构：

[1] UNIV PARIS 11, CNRS, URA, SPECT ATOM & ION LAB, F-91405 ORSAY, FRANCE

来源：

LASER INTERACTION WITH MATTER | 1995年 / 140期

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A detailed analysis of dielectronic recombination of Li-like Al10+ ions in laser-produced plasmas is presented. Efficiencies of different recombining ways according to the electron temperature are compared. Numerical simulations taking into account the spatial and temporal dependences of the: plasma density and temperature are used tr, calculate the intensity gain coefficients of the X-ray lasing lines associated to the transitions 3d-5f (lambda = 10.57 nm), 3d-4f (lambda = 15.46 nm) and 4f-5g (lambda = 33.47 nm). These gain coefficients an about 10% smaller with dielectronic recombination that without.

引用

页码：129 / 132

页数：4

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