MOVPE-GROWN INALAS/INGAAS/INP MODFETS WITH VERY HIGH F(T)

被引：8

作者：

NUMMILA, K ^{[1
]}

TONG, M ^{[1
]}

KETTERSON, A ^{[1
]}

ADESIDA, I ^{[1
]}

CANEAU, C ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance 0.15 mum gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent 'kink-free' DC characteristics with extrinsic transconductance g(m) of 1080 mS/mm at a drain current of 508 mA/mm have been achieved. A unity current-gain cutoff frequency f(T) of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown lattice-matched InAlAs/InGaAs MODFETs.

引用

页码：274 / 275

页数：2

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