1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE

被引：79

|

作者：

CROWDER, BL

ZIRINSKY, S

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期

关键词：

D O I：

10.1109/JSSC.1979.1051176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：291 / 293

页数：3

相关论文

共 26 条

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
ZIRINSKY, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[2] 1 MU-M MOSFET VLSI TECHNOLOGY .1. OVERVIEW
YU, HN
REISMAN, A
OSBURN, CM
CRITCHLOW, DL
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 240 - 246
[3] 1 MU-M MOSFET VLSI TECHNOLOGY .1. OVERVIEW
YU, HN
REISMAN, A
OSBURN, CM
CRITCHLOW, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 318 - 324
[4] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
AITKEN, JM
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 294 - 301
[5] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
AITKEN, JM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 372 - 379
[6] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
LUHN, HE
DONOHUE, TP
SPETH, AJ
WILSON, A
HATZAKIS, M
CHANG, THP
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290
[7] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
LUHN, HE
DONOHUE, TP
SPETH, AJ
WILSON, A
HATZAKIS, M
CHANG, THP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 360 - 368
[8] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS
NING, TH
COOK, PW
DENNARD, RH
OSBURN, CM
SCHUSTER, SE
YU, HN
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 268 - 275
[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS
NING, TH
COOK, PW
DENNARD, RH
OSBURN, CM
SCHUSTER, SE
YU, HN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353
[10] 1 MU-M MOSFET VLSI TECHNOLOGY .3. LOGIC-CIRCUIT DESIGN METHODOLOGY AND APPLICATIONS
COOK, PW
SCHUSTER, SE
PARRISH, JT
DILONARDO, V
FREEDMAN, DR
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 255 - 268