FMR STUDY OF NEON IMPLANTED LPE GROWN GARNET LAYERS

被引:7
|
作者
ALGRA, HA
DEROODE, W
HENSKENS, RA
ROBERTSON, JM
机构
关键词
D O I
10.1063/1.328931
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2358 / 2360
页数:3
相关论文
共 50 条
  • [21] Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
    Donchev, Vesselin
    Milanova, Malina
    Georgiev, Stefan
    ENERGIES, 2022, 15 (18)
  • [22] Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques
    Prutskij, T
    Pelosi, C
    Brito-Orta, RA
    MICROELECTRONICS JOURNAL, 2005, 36 (3-6) : 374 - 378
  • [23] DOPING OF LPE LAYERS OF CDTE GROWN FROM TE SOLUTIONS
    ASTLES, M
    GORDON, N
    BRADLEY, D
    DEAN, PJ
    WIGHT, DR
    BLACKMORE, G
    JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 167 - 189
  • [24] SURFACE MORPHOLOGY OF GAAS LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPE
    IMAMURA, Y
    JASTRZEBSKI, L
    GATOS, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1560 - 1561
  • [25] PHOTOREFLECTANCE OF INTRINSIC GAAS EPITAXIAL LAYERS GROWN BY LPE WITH SUPERCOOLING
    ALEJOARMENTA, C
    VAZQUEZLOPEZ, C
    TORRESDELGADO, G
    MENDOZAALVAREZ, JG
    ALVARADOGIL, JJ
    REVISTA MEXICANA DE FISICA, 1993, 39 (06) : 924 - 931
  • [26] CHARACTERIZATION OF OXIDE LAYERS GROWN ON IMPLANTED SILICON
    FRANCO, G
    RAINERI, V
    FRISINA, F
    RIMINI, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 99 - 103
  • [27] INTERFACE ABRUPTNESS IN LPE GROWN (CDHG) TE LAYERS ON CDTE SUBSTRATES
    ASTLES, MG
    BLACKMORE, G
    DOSSER, OD
    HILL, H
    LYSTER, M
    BOOKER, GR
    HILL, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 549 - 553
  • [28] LPE InP layers grown in the presence of rare-earth elements
    Procházková, O
    Zavadil, J
    Zdánsky, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 14 - 17
  • [29] INVESTIGATION OF ERBIUM DOPING OF INP AND (GA,IN)(AS,P) LAYERS GROWN BY LPE
    CHATTERJEE, AK
    HAIGH, J
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 537 - 542
  • [30] Surface morphology of LPE SiGe layers grown on (100) Si substrates
    Sembian, AM
    Silier, I
    Davies, K
    Gutjahr, A
    Lyutovich, K
    Konuma, M
    Banhart, F
    THIN-FILM STRUCTURES FOR PHOTOVOLTAICS, 1998, 485 : 19 - 24