INTERFACE STATES OF MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES

被引:0
|
作者
CHUNG, SK
WU, Y
WANG, KL
SHENG, NH
LEE, CP
MILLER, DL
机构
[1] ROCKWELL INT CORP, THOUSAND OAKS, CA 91360 USA
[2] AJOU UNIV, SUWON, SOUTH KOREA
[3] SHANGHAI INST TECH PHYS, SHANGHAI, PEOPLES R CHINA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:149 / 153
页数:5
相关论文
共 50 条
  • [41] Microwave sensor based on modulation-doped GaAs/AlGaAs structure
    Juozapavicius, A
    Ardaravicius, L
    Suziedelis, A
    Kozic, A
    Gradauskas, J
    Kundrotas, J
    Seliuta, D
    Sirmulis, E
    Asmontas, S
    Valusis, G
    Roskos, HG
    Köhler, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S436 - S439
  • [42] Photoreflectance interference in modulation-doped AlGaAs/GaAs single heterojunctions
    Lee, Kyu-Seok
    Han, W. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (05) : 1821 - 1824
  • [43] MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURE CHARGE COUPLED DEVICES
    MILANO, RA
    COHEN, MJ
    MILLER, DL
    ELECTRON DEVICE LETTERS, 1982, 3 (08): : 194 - 196
  • [44] High electron mobility in AlGaAs/GaAs modulation-doped structures
    Saku, Tadashi
    Hirayama, Yoshiro
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (05): : 902 - 905
  • [45] ELECTRON TRANSPORT IN MODULATION-DOPED InAlAs/InGaAs/InAlAs AND AlGaAs/InGaAs/AlGaAs HETEROSTRUCTURES
    Pozela, J.
    Pozela, K.
    Juciene, V.
    Suziedelis, A.
    Zurauskiene, N.
    Shkolnik, A. S.
    LITHUANIAN JOURNAL OF PHYSICS, 2011, 51 (04): : 270 - 275
  • [46] Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well
    Pozela, K
    SEMICONDUCTORS, 2001, 35 (11) : 1305 - 1308
  • [47] Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well
    K. Požela
    Semiconductors, 2001, 35 : 1305 - 1308
  • [48] Donor states in modulation-doped Si/SiGe heterostructures
    Blom, A
    Odnoblyudov, MA
    Yassievich, IN
    Chao, KA
    PHYSICAL REVIEW B, 2003, 68 (16)
  • [49] ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-(ALGA)AS HETEROSTRUCTURES
    STORMER, HL
    SURFACE SCIENCE, 1983, 132 (1-3) : 519 - 526
  • [50] Photoellipsometry studies of delta-doped GaAs and modulation-doped AlGaAs/GaAs heterojunction structures
    Xiong, YM
    Wong, CC
    Saitoh, T
    THIN SOLID FILMS, 1995, 270 (1-2) : 300 - 306