MASS-TRANSPORT OF A AG THIN-FILM ON A STEPPED SI(111) SURFACE

被引：15
|
作者：
WU, NJ
NATORI, A
YASUNAGA, H
机构：
[1] Univ of Electro-Communications, Chofu, Japan
来源：
SURFACE SCIENCE | 1991年 / 242卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(91)90264-S
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The mass transport of Ag on stepped Si(111) surfaces was investigated by a scanning Auger microscope (SAM). A highly anisotropic surface diffusion of Ag ultra-thin films was observed on 0-degrees, 0.5-degrees, 3-degrees and 6-degrees vicinal Si(111). The mass transport parallel to the step edge is overwhelmingly greater than that perpendicular to the edge. The preferential mass transport toward the cathode due to DC current heating was also observed. This increased with the resistivity of the Si(111) substrate. The anisotropic mass transport is correlated with the difference of the binding energies at the step edge sites and at the terrace sites.
引用
收藏
页码：191 / 194
页数：4
相关论文
共 50 条
  • [21] A characteristic feature of crystalline thin-film growth of Si on a 7x7 superlattice surface of Si(111)
    Shigeta, Y
    Endo, J
    Maki, K
    JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 617 - 621
  • [22] LEED STUDY OF EPITAXIAL-GROWTH OF THIN-FILM AU(111)-AG(111) SYSTEM
    SORIA, F
    SACEDON, JL
    ECHENIQUE, PM
    TITTERINGTON, D
    SURFACE SCIENCE, 1977, 68 (01) : 448 - 456
  • [23] Spin-dependent transport in Si thin-film transistors
    Kawachi, G
    Graeff, CFO
    Brandt, MS
    Stutzmann, M
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 851 - 861
  • [24] VOLTAGE BREAKDOWN OF AG THIN-FILM DEPOSITED ON FRACTAL SURFACE
    WANG, JS
    YE, GX
    XU, YQ
    ZHANG, QR
    CHINESE PHYSICS LETTERS, 1994, 11 (01) : 43 - 45
  • [25] First principle study of a bimolecular thin film on Ag(111) surface
    Sassi, Michel
    Oison, Vincent
    Debierre, Jean-Marc
    SURFACE SCIENCE, 2008, 602 (17) : 2856 - 2862
  • [26] Adsorption stage in the formation of Eu-Si(111) thin-film structures
    Krachino, TV
    Kuz'min, MV
    Loginov, MV
    Mittsev, MA
    PHYSICS OF THE SOLID STATE, 2000, 42 (03) : 566 - 576
  • [27] Adsorption stage in the formation of Eu-Si(111) thin-film structures
    T. V. Krachino
    M. V. Kuz’min
    M. V. Loginov
    M. A. Mittsev
    Physics of the Solid State, 2000, 42 : 566 - 576
  • [28] Thermally activated reconstruction in Yb-Si(111) thin-film structures
    Krachino, TV
    Kuzmin, MV
    Loginov, MV
    Mittsev, MA
    PHYSICS OF THE SOLID STATE, 1997, 39 (09) : 1493 - 1497
  • [29] ATOM DEPOSITION ON SURFACE CLUSTERS - THIN-FILM GROWTH ON PD(111)
    BILALBEGOVIC, G
    DEPRISTO, AE
    SURFACE SCIENCE, 1994, 302 (03) : L299 - L304
  • [30] Thermally activated reconstruction in Yb-Si(111) thin-film structures
    T. V. Krachino
    M. V. Kuz’min
    M. V. Loginov
    M. A. Mittsev
    Physics of the Solid State, 1997, 39 : 1493 - 1497
12345