MASS-TRANSPORT OF A AG THIN-FILM ON A STEPPED SI(111) SURFACE

被引：15
|
作者：
WU, NJ
NATORI, A
YASUNAGA, H
机构：
[1] Univ of Electro-Communications, Chofu, Japan
来源：
SURFACE SCIENCE | 1991年 / 242卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(91)90264-S
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The mass transport of Ag on stepped Si(111) surfaces was investigated by a scanning Auger microscope (SAM). A highly anisotropic surface diffusion of Ag ultra-thin films was observed on 0-degrees, 0.5-degrees, 3-degrees and 6-degrees vicinal Si(111). The mass transport parallel to the step edge is overwhelmingly greater than that perpendicular to the edge. The preferential mass transport toward the cathode due to DC current heating was also observed. This increased with the resistivity of the Si(111) substrate. The anisotropic mass transport is correlated with the difference of the binding energies at the step edge sites and at the terrace sites.
引用
收藏
页码：191 / 194
页数：4
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