ZNS THIN-FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：11
|
作者：
LI, JW
SU, YK
YOKOYAMA, M
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 08期
关键词：
LOW-PRESSURE MOCVD; ZNS; THIN FILM; CRYSTALLINITY; ATOMIC RATIO; UNIFORMITY;
D O I：
10.1143/JJAP.33.4723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, the deposited properties of ZnS thin films prepared by the low-pressure metalorganic chemical vapor deposition (MOCVD) technique utilizing dimethyl-zinc (DMZn) and H2S as the source materials have been reported. The effects of the growth conditions on the growth rate of the films have been measured and the growth mechanism has been discussed. High-quality ZnS thin films with strong preferred orientation can be grown. The Delta 2 theta value of the zinc blende (111) plane diffraction peak can be reduced below 0.175 degrees. The atomic ratio of S/Zn and lattice constant are 0.96 and 5.418 Angstrom, respectively.
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页码：4723 / 4726
页数：4
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