SCREENING OF IMPURITY IONS IN HEAVILY DOPED SEMICONDUCTORS

被引：2

|

作者：

GEETHA, PL

BALASUBRAMANIAN, S

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.1052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1052 / 1054

页数：3

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