SCREENING OF IMPURITY IONS IN HEAVILY DOPED SEMICONDUCTORS

被引：2

|

作者：

GEETHA, PL

BALASUBRAMANIAN, S

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.1052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1052 / 1054

页数：3

相关论文

共 50 条

[1] BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS
MORGAN, TN
PHYSICAL REVIEW, 1965, 139 (1A): : A343 - &
[2] THE EFFECT OF THE EXCITED IMPURITY STATES IN HEAVILY DOPED SEMICONDUCTORS
FIGUEIRA, MS
MAKLER, SS
ANDA, EV
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (04): : 623 - 636
[3] SPATIAL DISTRIBUTION OF IMPURITY CENTERS IN HEAVILY DOPED SEMICONDUCTORS
VOLKOV, BA
MATVEEV, VV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (03): : 574 - &
[4] SCREENED IMPURITY SCATTERING IN HEAVILY DOPED COVALENT SEMICONDUCTORS
ROWE, DM
ELECTRONICS LETTERS, 1971, 7 (26) : 763 - &
[5] THE ORIGIN OF THE MINORITY IMPURITY STATES IN HEAVILY DOPED SEMICONDUCTORS
DOMANEVSKII, DS
KRASOVSKII, VV
PROKOPENYA, MV
VILKOTSKII, VA
ZHOKHOVETS, SV
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (02): : 693 - 700
[6] THEORY OF IMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS
LEVANYUK, AP
OSIPOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1050 - 1055
[7] Structure of the impurity band in heavily doped nonmagnetic semiconductors
Chen, Hongwei
Hu, Zi-Xiang
PHYSICAL REVIEW B, 2023, 107 (13)
[8] THE ROLE OF IMPURITY CORRELATION IN AUGER RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS
QUANG, DN
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (27) : 5143 - 5152
[9] A SIMPLIFIED APPROACH TO IMPURITY-BAND TAILS IN HEAVILY DOPED SEMICONDUCTORS
CHAIYASITH, P
KOKPOL, S
SAYAKANIT, V
PHYSICS LETTERS A, 1983, 98 (5-6) : 273 - 276
[10] THEORY OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS WITH OVERLAPPING ELECTRONIC ORBITALS
MAJLIS, N
ANDA, E
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (08): : 1607 - 1617

← 1 2 3 4 5 →