FILAMENTARY IMPACT IONIZATION IN COMPENSATED GERMANIUM AT 4.2 DEGREES K

被引：35

作者：

MELNGAILIS, I

MILNES, AG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 03期

关键词：

D O I：

10.1063/1.1777205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：995 / &

共 50 条

[1] MICROWAVE MODULATOR UTILIZING IMPACT IONIZATION IN BULK GERMANIUM AT 4.2 DEGREES K
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[2] LOW-LEVEL MICROWAVE LIMITING UTILIZING IMPACT IONIZATION IN BULK GERMANIUM AT 4.2 DEGREES K
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[9] INFLUENCE OF DOPING ON EXCITON STATES IN GERMANIUM AT 4.2 DEGREES K
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