ANDERSON TRANSITION IN SILICON INVERSION-LAYERS

被引：0

作者：

KONG, GL ^{[1
]}

LIAO, XB ^{[1
]}

YANG, XR ^{[1
]}

ZHANG, DL ^{[1
]}

LIN, SY ^{[1
]}

机构：

[1] ACAD SINICA,INST PHYS,BEIJING,PEOPLES R CHINA

来源：

CHINESE PHYSICS | 1981年 / 1卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：226 / 231

页数：6

共 50 条

[11] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON
COEN, RW
MULLER, RS
SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40
[12] NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS
KAWAGUCHI, Y
KAWAJI, S
SURFACE SCIENCE, 1982, 113 (1-3) : 505 - 509
[13] VALLEY OCCUPANCY TRANSITION IN SI INVERSION-LAYERS
ISIHARA, A
IORIATTI, LC
PHYSICAL REVIEW B, 1982, 25 (08): : 5534 - 5537
[14] ENERGY-LOSS RATE IN SILICON INVERSION-LAYERS
PAYNE, MC
DAVIES, RA
INKSON, JC
PEPPER, M
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (10): : L291 - L299
[15] DEHAAS-VANALPHEN EFFECT IN SILICON INVERSION-LAYERS
FANG, FF
STILES, PJ
PHYSICAL REVIEW B, 1983, 28 (12): : 6992 - 6995
[16] NEGATIVE MAGNETORESISTANCE IN SILICON(100) MOS INVERSION-LAYERS
KAWAGUCHI, Y
KAWAJI, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (02) : 699 - 700
[17] THE WIGNER GLASS AND CONDUCTANCE OSCILLATIONS IN SILICON INVERSION-LAYERS
PEPPER, M
UREN, MJ
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (20): : L617 - L625
[18] MAGNETOCONDUCTANCE AND QUANTIZED CONFINEMENT IN NARROW SILICON INVERSION-LAYERS
SKOCPOL, WJ
JACKEL, LD
HOWARD, RE
CRAIGHEAD, HG
FETTER, LA
MANKIEWICH, PM
GRABBE, P
TENNANT, DM
SURFACE SCIENCE, 1984, 142 (1-3) : 14 - 18
[19] ELECTRON ELECTRON-SCATTERING IN SILICON INVERSION-LAYERS
DAVIES, RA
PEPPER, M
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12): : L353 - L360
[20] VALLEY DEGENERACY AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS
COLE, T
SURFACE SCIENCE, 1982, 113 (1-3) : 41 - 49

← 1 2 3 4 5 →