NONDESTRUCTIVE MEASUREMENT OF SUBSURFACE MICRO-DEFECTS IN SILICON-WAFER BY LASER SCATTERING TOMOGRAPHY

被引：0
|
作者：
HIRAI, K
OHTSUKA, M
MORIYA, K
机构：
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES | 1994年 / 135期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A non-destructive measurement system has been developed for characterizing subsurface micro-defects in silicon wafers. The laser beam is focused to about 3 mu m diameter and applied to the wafer. The scattered light is also observed from the polished side. The scattered light has a complicated signal, because the light from haze and dust on the surface and defects in the crystal are mixed. By using a polarization analysis method, dust and defects are clearly distinguished.
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页码：139 / 142
页数：4
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