EFFECT OF ZN PARTIAL-PRESSURE DURING GROWTH ON ELECTRICAL-PROPERTIES OF ZNSE CRYSTALS GROWN FROM THE MELT

被引：3
|
作者：
KIKUMA, I
KIKUCHI, A
FURUKOSHI, M
机构：
[1] Department of Electronics, Ibaraki University, Hitachi, ibaraki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期
关键词：
Low resistivity; Melt growth; Zn partial pressure; ZnSes;
D O I：
10.1143/JJAP.29.L1963
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper describes the melt growth of ZnSe crystals by a modified Bridgman method under argon pressure. A definite Zn partial pressure over the melt is maintained by controlling the temperature of a Zn zeservoir. Electrical properties of as-grown crystals depend on the temperature of the reservoir. Low-resistivity n-type crystals are obtained when the temperature of the reservoir is kept above 1040°C during growth. The resistivity of the crystals is 0.2 to 5 Ω·cm and the Hall mobility is 380 to 500 cm2/V ·s at room temperature (290±5 K). The temperature of the Zn reservoir during the cooling process after solidification also affects the electrical properties. © 1990 IOP Publishing Ltd.
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页码：L1963 / L1965
页数：3
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