NEW APPROACH TO THE MECHANISM OF STRAIN RELEASE IN LATTICE-MISMATCHED EPITAXIAL-FILMS

被引：13
|
作者：
TATSUOKA, H
KUWABARA, H
NAKANISHI, Y
FUJIYASU, H
机构：
[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN
[2] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90812-W
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A new approach is presented for calculation of the dependence of residual strain in regions near the surface on the thickness of CdTe(100) films on GaAs(100) substrates. The present results are obtained assuming that the misfit dislocation density is proportional to the strain. Application of our model to the ZnSe/GaAs(100) system is also discussed. It is found that our model fits experimental results quite well.
引用
收藏
页码：554 / 559
页数：6
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