SINGLE-CRYSTAL GROWTH AND ELECTRICAL-PROPERTIES OF CASI2

被引：17
|
作者：
HIRANO, T
机构：
[1] National Research Institute for Metals, Tsukuba, Ibaraki, 305, 1-2-1, Sengen
来源：
JOURNAL OF THE LESS-COMMON METALS | 1991年 / 167卷 / 02期
关键词：
D O I：
10.1016/0022-5088(91)90285-C
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Single crystals of CaSi2 were grown by a floating zone method. Like mica, the single crystals exhibited a smooth cleavage surface over extended regions. The cleavage occurred on the {111} plane. CaSi2 behaved as a metal. The electrical resistivity showed a positive temperature dependence with high residual resistivity and some crystallographic orientation dependence. The Hall measurements showed that electrons were the predominant carriers in CaSi2.
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页码：329 / 337
页数：9
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