EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS

被引：2
|
作者：
HSIA, ST
LEE, CP
HWANG, HL
机构：
[1] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 30043,TAIWAN
[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30043,TAIWAN
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 33卷 / 2-3期
关键词：
AUGER ELECTRON SPECTROSCOPY; GALLIUM ARSENIDE; CONTACT RESISTANCE; NICKEL;
D O I：
10.1016/0921-5107(94)01209-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n-GaAs was investigated. The lowest value of the specific contact resistance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 400 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. It was noted that In reacted with GaAs and formed a heterojunction ohmic contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting point (156 degrees C) of In, additions of Ni are needed to completely react the remaining In to form a high melting point compound.
引用
收藏
页码：178 / 181
页数：4
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