A NUMERICAL STUDY ON OXYGEN-TRANSPORT IN SILICON MELT IN A DOUBLE-CRUCIBLE METHOD

被引：12
|
作者：
ONO, N
KIDA, M
ARAI, Y
SAHIRA, K
机构：
[1] Central Research Institute, Mitsubishi Materials Corp., Omiya, Saitama
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(94)90981-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Oxygen transport in the silicon melt in the double-crucible method was simulated by using the kappa-epsilon turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.
引用
收藏
页码：427 / 434
页数：8
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