THE EFFECT OF CARBON AND BORON ON THE ACCUMULATION OF VACANCY-OXYGEN COMPLEXES IN SILICON

被引：4
|
作者：
AKHMETOV, VD
BOLOTOV, VV
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期
关键词：
D O I：
10.1080/00337578008210027
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：149 / 152
页数：4
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