CHARACTERISTICS OF ISOTYPE N GE-N GAAS HETEROJUNCTIONS

被引：5
|
作者：
DEJAEGER, JC
SALMER, G
机构：
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 04期
关键词：
D O I：
10.1049/ip-i-1.1980.0042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：207 / 211
页数：5
相关论文
共 50 条
  • [21] ELECTRICAL AND INTERFACIAL CHARACTERISTICS OF NIAS/N-GAAS, NIAS/GE/N-GAAS AND GE/NIAS/N-GAAS STRUCTURES
    RAI, RS
    MAHAJAN, S
    HARBISON, JP
    SANDS, T
    GENUT, M
    CHEEKS, TL
    KERAMIDAS, VG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 269 - 274
  • [22] Structural and electronic properties of As:Ge-n on Si(001) surface
    Che, JG
    Zhang, KM
    Xie, XD
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1996, 80 : 169 - 172
  • [23] Ge-N bonds in germatranes. Topological analysis
    Alekseev, N. V.
    Knyazev, S. P.
    Chernyshev, I. A.
    JOURNAL OF STRUCTURAL CHEMISTRY, 2005, 46 (03) : 387 - 392
  • [24] First Insertions of Carbene Ligands into Ge-N and Si-N Bonds
    Alvarez-Rodriguez, Lucia
    Cabeza, Javier A.
    Garcia-Alvarez, Pablo
    Gomez-Gallego, Mar
    Merinero, Alba D.
    Sierra, Miguel A.
    CHEMISTRY-A EUROPEAN JOURNAL, 2017, 23 (18) : 4287 - 4291
  • [25] ABOVE-BARRIER PHOTOCURRENT IN P-GE/N/GAAS HETEROJUNCTIONS
    BELOUSOVA, TV
    NEIZVESTNYI, IG
    SADOFEV, YG
    SUPRUN, SP
    SHERSTYAKOVA, VN
    SHUMSKII, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1210 - 1212
  • [26] STUDY OF CURRENT TRANSMISSION IN GE-GAAS P-N HETEROJUNCTIONS
    RYBKA, V
    KREJCI, P
    SEVCIK, Z
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 28 (02): : 455 - 460
  • [27] Binding energies of germanium clusters, Ge-n (n=2-5)
    Deutsch, PW
    Curtiss, LA
    Blaudeau, JP
    CHEMICAL PHYSICS LETTERS, 1997, 270 (5-6) : 413 - 418
  • [28] Conduction characteristics of n-InAs/n-GaAs heterojunctions with misfit dislocations
    Kawazu, Takuya
    Mano, Takaaki
    Sakuma, Yoshiki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (07)
  • [29] Electron affinities of germanium anion clusters, Ge-n (n=2-5)
    Deutsch, PW
    Curtiss, LA
    Blaudeau, JP
    CHEMICAL PHYSICS LETTERS, 2001, 344 (1-2) : 101 - 106
  • [30] GE-SI N-N HETEROJUNCTIONS
    YAMAGUCH.J
    NUNOSHIT.M
    HAMAKAWA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : C213 - &
12345