RECOMBINATION OF INJECTED CHARGE-CARRIERS

被引：1
|
作者：
PIMBLEY, JM
机构：
[1] Department of Mathematical Sciences, Rensselaer Polytechnic Institute, Troy
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 11期
关键词：
D O I：
10.1016/0038-1101(90)90105-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Generation and recombination of charge carriers dominate some performance aspects of semiconductor devices. Investigation of charge carrier recombination is frustrated by the paucity of direct measurement techniques for the recombination process. We formulate and solve the mathematics governing one such technique. Our solution relates a measured charge collection efficiency to the minority carrier (recombination) lifetime of the Hall-Shockley-Read model. © 1990.
引用
收藏
页码：1333 / 1338
页数：6
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