PRODUCTION AND PROPERTIES OF HETEROJUNCTIONS ON ZNSE, GE, GAAS, GAP

被引：0

作者：

IVANOV, VA ^{[1
]}

MURAVYOVA, KK ^{[1
]}

KALINKIN, IP ^{[1
]}

SAKSEEV, DA ^{[1
]}

机构：

[1] LENSOVET TECHNOL INST,LENINGRAD,USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1977年 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：82 / 87

页数：6

共 50 条

[31] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
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[32] INFLUENCE OF METHOD OF PREPARATION ON STRUCTURE AND PROPERTIES OF GE-GAAS HETEROJUNCTIONS
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[39] ELECTROPHOTOLUMINESCENCE IN GAP-GAAS HETEROJUNCTIONS
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[40] THE EFFECT OF EPITAXY CONDITIONS ON THE INTERFACE OF GAAS/ZNSE HETEROJUNCTIONS
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