III-V ON DISSIMILAR SUBSTRATES - EPITAXY AND ALTERNATIVES

被引：0

作者：

BORGHS, G ^{[1
]}

DEBOECK, J ^{[1
]}

POLLENTIER, I ^{[1
]}

DEMEESTER, P ^{[1
]}

BRYS, C ^{[1
]}

DOBBELAERE, W ^{[1
]}

机构：

[1] IMEC,LEA,B-9000 GHENT,BELGIUM

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heteroepitaxial growth and thin film transfer are two techniques for the integration of III-V technologies on dissimilar substrates. Crystalline quality remains the issue for heteroepitaxial layers of III-V's on Si. Quality improving techniques are discussed. Stress in the thin epitaxial film is another point of concern but recent progress has alleviated this problem to some extend. Thin film transfer technology is currently tackling more processing and yield related issues and its maturity is making it a competing or complementary alternative to thin-film growth. For some very appealing applications thin-film transfer is the only solution, offering high flexibility and exciting combinations.

引用

页码：441 / 448

页数：8

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