PROCESS MODEL AND CHARACTERIZATION OF NEW SUB-MICRON CHANNEL MOS DEVICE

被引：0
|
作者：
RAGSDALE, S [1 ]
YAMAGUCHI, T [1 ]
LUST, ML [1 ]
SATO, S [1 ]
机构：
[1] TEKTRONIX INC,APPL RES GRP,BEAVERTON,OR 97005
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C123 / C123
页数：1
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