PHOTOLUMINESCENCE OF MG-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING MG3AS2 AS A MG SOURCE - A COMPARISON WITH MG+ ION-IMPLANTATION

被引：21
|
作者：
MAKITA, Y
TAKEUCHI, Y
OHNISHI, N
NOMURA, T
KUDO, K
TANAKA, H
LEE, HC
MORI, M
MITSUHASHI, Y
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期
关键词：
D O I：
10.1063/1.97628
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1184 / 1186
页数：3
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