BEHAVIOR OF DISLOCATIONS IN SILICON SEMICONDUCTOR DEVICES - DIFFUSION ELECTRICAL

被引：29

|

作者：

LAWRENCE, JE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 08期

关键词：

D O I：

10.1149/1.2411449

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：860 / &

相关论文

共 50 条

[21] Electrical properties and diffusion behavior of hafnium in single crystal silicon
R. Sachdeva
A.A. Istratov
P.N.K. Deenapanray
E.R. Weber
Applied Physics A, 2006, 84 : 351 - 367
[22] Electrical properties and diffusion behavior of hafnium in single crystal silicon
Sachdeva, R.
Istratov, A. A.
Deenapanray, P. N. K.
Weber, E. R.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 84 (04): : 351 - 367
[23] SOME EXAMPLES OF QUANTITATIVE EBIC MODE FOR THE STUDY OF THE ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTOR-DEVICES
BRESSE, JF
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 465 - 468
[24] Dislocations as Active Components in Novel Silicon Devices
Kittler, Martin
Reiche, Manfred
ADVANCED ENGINEERING MATERIALS, 2009, 11 (04) : 249 - 258
[25] THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
OURMAZD, A
WILSHAW, PR
BOOKER, GR
PHYSICA B & C, 1983, 116 (1-3): : 600 - 605
[26] EFFECT OF DIFFUSION-INDUCED DISLOCATIONS ON ANTIMONY DIFFUSION INTO SILICON
SONG, SH
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 145 - 149
[27] EFFECT OF DISLOCATIONS ON DIFFUSION OF BORON AND PHOSPHORUS IN SILICON
BARYSHEV, RS
FIZIKA TVERDOGO TELA, 1977, 19 (03): : 882 - 884
[28] Influence of silicon crystal defects and contamination on the electrical behavior of power devices
Schulze, HJ
Kolbesen, BO
SOLID-STATE ELECTRONICS, 1998, 42 (12) : 2187 - 2197
[29] CONDITIONS FOR THE CREATION OF DISLOCATIONS BY DIFFUSION OF PHOSPHORUS INTO SILICON
STOJADINOVIC, ND
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (01): : K5 - +
[30] SOLITONS AND THE ELECTRICAL AND MOBILITY PROPERTIES OF DISLOCATIONS IN SILICON
HEGGIE, M
JONES, R
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (04): : 365 - 377

← 1 2 3 4 5 →