DISPERSION-RELATION IN N-CHANNEL INVERSION-LAYERS ON A11-3BV2 SEMICONDUCTORS

被引：1

作者：

BISWAS, SN ^{[1
]}

GHATAK, KP ^{[1
]}

机构：

[1] JADAVPUR UNIV,FAC ENGN & TECHNOL,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 68卷 / 06期

关键词：

D O I：

10.1080/00207219008921235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An attempt is made to derive the two-dimensional electron dispersion relations in n-channel inversion layers on A311B2V semiconductors under both the weak and strong electric field limits, by including various anisotropies in the energy band structure within the framework of the k • p formalism. In addition, the corresponding well known results of the isotropic two-band Kane model are also obtained from our generalized results under certain limiting conditions. © 1990 Taylor and Francis Ltd.

引用

页码：957 / 960

页数：4

共 34 条

[21] EFFECT OF A QUANTIZING MAGNETIC-FIELD ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON SMALL GAP SEMICONDUCTORS
CHAKRAVARTI, AN
CHOWDHURY, AK
GHATAK, KP
DHAR, A
CHOUDHURY, DR
CZECHOSLOVAK JOURNAL OF PHYSICS, 1981, 31 (08) : 905 - 912
[22] On the gate capacitance of Mos structures in N-channel inversion layers on ternary chalcopyrite semiconductors
Ghatak, K.P.
Chattopadhyay, N.
Mondal, M.
Applied Physics A: Solids and Surfaces, 1989, 48 (04): : 365 - 371
[23] ANISOTROPY OF PIEZORESISTANCE IN N-CHANNEL INVERSION-LAYERS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS ON (001)SI
MARUYAMA, T
ZAIMA, S
KOIDE, Y
KANDA, Y
YASUDA, Y
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5687 - 5691
[24] ON THE GATE-CONTROLLED SURFACE CAPACITANCE OF MOS STRUCTURES OF SI HAVING N-CHANNEL INVERSION-LAYERS
CHOUDHURY, DR
CHOWDHURY, AK
CHAKRAVARTI, AN
CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (10) : 1157 - 1160
[25] THEORY OF ELECTRONIC-PROPERTIES IN N-CHANNEL INVERSION-LAYERS ON NARROW-GAP SEMICONDUCTORS .2. INTER-SUBBAND OPTICAL-ABSORPTION ON INSB
TAKADA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (06) : 1998 - 2005
[26] THEORETICAL-ANALYSIS OF THE OSCILLATORY DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD
MONDAL, M
GHATAK, KP
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1986, 62 (01) : 115 - 119
[27] CARRIER CONCENTRATION-DEPENDENCE AND TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON (100) N-CHANNEL INVERSION-LAYERS AT LOW-TEMPERATURES
KAWAGUCHI, Y
SUZUKI, T
KAWAJI, S
SOLID STATE COMMUNICATIONS, 1980, 36 (03) : 257 - 259
[28] THEORETICAL ANALYSIS OF THE OSCILLATORY DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD.
Mondal, M.
Ghatak, K.P.
1600, (62):
[29] Einstein Relation in n-Channel Inversion Layers of Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory, Relative Comparison and Suggestion for an Experimental Determination
Bhattacharya, S.
Sarkar, R.
De, D.
Mukherjee, S.
Pahari, S.
Saha, A.
Roy, S.
Paul, N. C.
Ghosh, S.
Ghatak, K. P.
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2009, 6 (01) : 112 - 134
[30] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN
KAWAKAMI, T
OKAMURA, M
ELECTRONICS LETTERS, 1979, 15 (16) : 502 - 504

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