SCANNING ELECTRON ACOUSTIC MICROSCOPY OF INDIUM-DOPED SEMIINSULATING GAAS

被引：4
|
作者：
MENDEZ, B
PIQUERAS, J
机构：
[1] Dept. de Fisica de Mater., Univ. Complutense, Madrid
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 03期
关键词：
D O I：
10.1088/0268-1242/8/3/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
引用
收藏
页码：320 / 321
页数：2
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