CHARACTERIZATION OF RECTIFYING CONTACTS ON NATURAL TYPE-IIB DIAMOND

被引：1
|
作者：
HARTSELL, ML
WYNANDS, HA
FOX, BA
机构：
[1] Kobe Steel USA Inc., Electronic Materials Center, 4401 Bldg., Research Triangle Park, NC 27709
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 04期
关键词：
D O I：
10.1063/1.112323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-semiconducting diamond (MS) and metal-insulating diamond-semiconducting diamond (MIS) contacts were fabricated on the same type IIb single crystal diamond. Direct comparisons of MS and MIS structure characteristics were made by analysis of current-voltage and differential capacitance-voltage (C-V) data. Both the MS and MIS contacts exhibited good rectifying characteristics, with a 5 V rectification ratio > 10(6). The depletion layer uncompensated acceptor concentration measured in both structures by C-V analysis was -1.8 X 10(16) cm-3.
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页码：430 / 432
页数：3
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