TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引:0
|
作者
WERNER, A
MOUSTAKAS, TD
KUNST, M
机构
关键词
D O I
10.1557/PROC-145-461
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:461 / 466
页数:6
相关论文
共 50 条
  • [41] PICOSECOND PHOTOCONDUCTIVITY IN POLYCRYSTALLINE GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY
    MORSE, JD
    MARIELLA, RP
    ADKISSON, JW
    ANDERSON, GD
    HARRIS, JS
    DUTTON, RW
    APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1382 - 1384
  • [42] A STUDY OF THE BEHAVIOR OF TIN ATOMS ON DOPING GAAS (100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    VARAKSIN, GA
    INORGANIC MATERIALS, 1984, 20 (05) : 632 - 635
  • [43] IMPROVEMENT IN THE CRYSTALLINE QUALITY OF HETEROEPITAXIAL GAAS ON SI FILMS GROWN BY MODULATED MOLECULAR-BEAM EPITAXY
    LEE, HP
    LIU, XM
    WANG, S
    GEORGE, T
    WEBER, ER
    APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2695 - 2697
  • [44] THE MICROSTRUCTURE OF FE AND AG THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS (001)
    CHIEN, CJ
    BRAVMAN, JC
    FARROW, RFC
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4343 - 4345
  • [45] PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY
    KREBS, JJ
    JONKER, BT
    PRINZ, GA
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2596 - 2599
  • [46] PHOTOREFLECTANCE CHARACTERIZATION OF CDTE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100)
    MELENDEZLIRA, M
    HERNANDEZCALDERON, I
    NILES, DW
    HOCHST, H
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03): : 219 - 222
  • [47] Effect of Uncontrollable Impurities on the Electric Properties of GaAs Films Grown by Molecular-Beam Epitaxy.
    Dvoryankina, G.G.
    Dvoryankin, V.F.
    Varaksin, G.A.
    Petrov, A.G.
    Kudryashov, A.A.
    Shemet, V.V.
    Yassen, M.L.
    Neorganiceskie materialy, 1986, 22 (03): : 371 - 375
  • [48] EFFECT OF UNCONTROLLED IMPURITIES ON ELECTRICAL-PROPERTIES OF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    VARAKSIN, GA
    PETROV, AG
    KUDRYASHOV, AA
    SHEMET, VV
    YASSEN, ML
    INORGANIC MATERIALS, 1986, 22 (03) : 322 - 326
  • [49] BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAP SUBSTRATES
    LACKLISON, DE
    ORTON, JW
    HARRISON, I
    CHENG, TS
    JENKINS, LC
    FOXON, CT
    HOOPER, SE
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1838 - 1842
  • [50] STRUCTURAL CHARACTERIZATIONS OF INITIAL NUCLEATION OF GAAS ON SI FILMS GROWN BY MODULATED MOLECULAR-BEAM EPITAXY
    LEE, HP
    LIU, XM
    MALLOY, K
    WANG, S
    GEORGE, T
    WEBER, ER
    LILIENTALWEBER, Z
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (02) : 179 - 186