ION-BEAM-INDUCED ELECTRICAL-CONDUCTIVITY IN PLASMA-POLYMERIZED ANILINE FILM

被引：10

作者：

TONG, ZS ^{[1
]}

WU, MZ ^{[1
]}

PU, TS ^{[1
]}

ZHOU, F ^{[1
]}

LIU, HZ ^{[1
]}

机构：

[1] ACAD SINICA,INST NUCL RES,SHANGHAI 201800,PEOPLES R CHINA

来源：

SYNTHETIC METALS | 1995年 / 68卷 / 02期

关键词：

CONDUCTIVITY; PLASMA; ANILINE; FILM; ION BEAM;

D O I：

10.1016/0379-6779(94)02281-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma-polymerized organic films starting from aniline have been prepared. Characteristics of the films have been examined in detail using FT-IR, X-ray photoelectron spectroscopy (XPS), near-IR to UV spectroscopy and nuclear analysis techniques. While irradiation by 100 keV Ar+ ions at high fluence induces electrical conduction due to damage, doping of the plasma-polymerized aniline film with 24 keV I+ implantation at a fluence of 1 x 10(16) ions/cm2 results in a decrease of electrical resistivity by twelve orders of magnitude. A threshold-like dependence of resistivity on the ion fluence has been found for the plasma-polymerized film irradiated by 100 keV Ar+ ions, similar to conventional polymers.

引用

页码：125 / 131

页数：7

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