INFLUENCE OF DIELECTRIC CHARGE ON HOLE FIELD-EFFECT MOBILITY IN SILICON INVERSION LAYERS

被引：4
|
作者：
OAKLEY, RE
PEPPER, M
机构：
来源：
PHYSICS LETTERS A | 1972年 / A 41卷 / 01期
关键词：
D O I：
10.1016/0375-9601(72)90646-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：87 / &
相关论文
共 50 条
  • [11] High field hole velocity and velocity overshoot in silicon inversion layers
    Sinitsky, D
    Assaderaghi, F
    Hu, CM
    Bokor, J
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) : 54 - 56
  • [12] MOBILITY OF HOLES IN SILICON INVERSION LAYERS IN METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES
    GUZEV, AA
    KURYSHEV, GL
    SINITSA, SP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1755 - &
  • [13] Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
    Stassen, AF
    de Boer, RWI
    Iosad, NN
    Morpurgo, AF
    APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3899 - 3901
  • [14] Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress
    Wang, E
    Matagne, P
    Shifren, L
    Obradovic, B
    Kotlyar, R
    Cea, S
    He, J
    Ma, Z
    Nagisetty, R
    Tyagi, S
    Stettler, M
    Giles, MD
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 147 - 150
  • [15] QUANTUM OSCILLATIONS IN RHO-TYPE INVERSION LAYERS OF (111) AND ]100) SILICON FIELD-EFFECT TRANSISTORS
    KLITZING, KV
    LANDWEHR, G
    DORDA, G
    SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 489 - 493
  • [16] Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
    Hamadani, B. H.
    Richter, C. A.
    Gundlach, D. J.
    Kline, R. J.
    McCulloch, I.
    Heeney, M.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)
  • [17] Influence of Inversion Layer on Tunneling Field-Effect Transistors
    Lee, Woojun
    Choi, WooYoung
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (09) : 1191 - 1193
  • [18] COMMENTS ON HOLE MASS IN SILICON INVERSION LAYERS
    LANDWEHR, G
    BANGERT, E
    KLITZING, KV
    ENGLERT, T
    DORDA, G
    SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1031 - 1035
  • [19] FIELD-EFFECT MOBILITY IN QUANTIZED ACCUMULATION LAYERS ON ZNO SURFACES
    NITZAN, M
    GRINSHPAN, Y
    GOLDSTEIN, Y
    PHYSICAL REVIEW B, 1979, 19 (08): : 4107 - 4115
  • [20] CARRIER MOBILITY IN INVERSION LAYERS ON SURFACE OF SILICON
    ROMANOV, OV
    URITSKII, VY
    GRUZINOV, BF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1183 - &
12345