NUCLEATION AND GROWTH OF DIAMOND FILMS ON MU-C-SIC X-SI BY HOT-FILAMENT CVD

被引：9

作者：

HIRATA, GA ^{[1
]}

COTAARAIZA, L ^{[1
]}

AVALOSBORJA, M ^{[1
]}

FARIAS, MH ^{[1
]}

CONTRERAS, O ^{[1
]}

MATSUMOTO, Y ^{[1
]}

机构：

[1] CINVESTAV IPN, SEES, DEPT INGN ELECT, MEXICO CITY 07000, MEXICO

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷

关键词：

D O I：

10.1088/0953-8984/5/33A/107

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using hot-filament CVD (HF-CVD) We succeeded in preparing polycrystalline diamond films on non-scratched crystalline silicon by depositing a very thin microcrystalline silicon carbide buffer layer. Films were characterized by AES, EELS and SEM.

引用

页码：A305 / A306

页数：2

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