BROAD-BAND SMALL-SIGNAL IMPEDANCE CHARACTERIZATION OF SILICON (SI) P+-N-N+ IMPATT DIODES

被引：10
|
作者：
OHTOMO, M [1 ]
机构：
[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,JAPAN
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1974年 / MT22卷 / 07期
关键词：
D O I：
10.1109/TMTT.1974.1128317
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：709 / 718
页数：10
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