BROAD-BAND SMALL-SIGNAL IMPEDANCE CHARACTERIZATION OF SILICON (SI) P+-N-N+ IMPATT DIODES

被引：10

作者：

OHTOMO, M ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1974年 / MT22卷 / 07期

关键词：

D O I：

10.1109/TMTT.1974.1128317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 718

页数：10

共 50 条

[1] SMALL-SIGNAL IMPEDANCE OF GOLD-DOPED P+-N-N+ SILICON DIODES
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[9] COMPUTER-AIDED SMALL-SIGNAL CHARACTERIZATION OF IMPATT DIODES
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[10] RECOMBINATION DEPENDENT CHARACTERISTICS OF SILICON P+-N-N+ EPITAXIAL DIODES
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