NITROGEN TRAP IN THE SEMICONDUCTOR ALLOYS GAAS1-XPX AND ALXGA1-XAS

被引：68
|
作者：
WOLFORD, DJ
HSU, WY
DOW, JD
STREETMAN, BG
机构：
来源：
JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期
关键词：
D O I：
10.1016/0022-2313(79)90252-7
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：863 / 867
页数：5
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