FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON IN RF OXYGEN PLASMA

被引：13

|

作者：

ATANASOVA, ED

KIROV, KI

KANTARDJEVA, EI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：73 / 80

页数：8

相关论文

共 50 条

[1] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON
FEHLNER, FP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1723 - +
[2] ELECTRON-ENERGY LOSS AND AUGER-ELECTRON SPECTROSCOPY OF ULTRATHIN OXIDE-FILMS ON SILICON OBTAINED IN RF OXYGEN PLASMA
ATANASOVA, ED
SHOPOV, AV
APPLIED SURFACE SCIENCE, 1982, 10 (02) : 284 - 301
[3] METHOD OF FORMATION OF THIN OXIDE-FILMS ON SILICON IN A MICROWAVE MAGNETOACTIVE OXYGEN PLASMA
BARDOS, L
LONCAR, G
STOLL, I
MUSIL, J
ZACEK, F
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (16) : L195 - L197
[4] FORMATION OF THIN OXIDE-FILMS OF SILICON BY GAS PLASMA
ABE, H
EMOTO, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 925 - 926
[5] OXYGEN VACANCIES AND INTERSTITIALS IN OXIDE-FILMS ON SILICON
FOWKES, FM
HIELSCHER, FH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C315 - C316
[6] STRUCTURE OF OXIDE-FILMS ON SILICON
MOGILEVTSEV, PK
GUSEVA, NS
ARSLAMBEKOV, VA
KRISTALLOGRAFIYA, 1978, 23 (02): : 437 - &
[7] CARRIER CONDUCTION IN ULTRATHIN NITRIDED OXIDE-FILMS
SUZUKI, E
SCHRODER, DK
HAYASHI, Y
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3616 - 3621
[8] ELLIPSOMETRIC MEASUREMENTS OF ULTRATHIN OXIDE-FILMS ON SI
KRAGLER, G
MUNZ, P
BUCHER, E
HELVETICA PHYSICA ACTA, 1980, 53 (04): : 639 - 643
[9] THE FORMATION OF THIN Y-BA-CU OXIDE-FILMS BY RF SPUTTERING
LANCHBERY, JF
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (03) : 538 - 541
[10] ELECTROCHEMICAL CHARACTERISTICS OF SHUNGITE - SORPTION OF OXYGEN AND FORMATION OF ANODIC OXIDE-FILMS
ZAIDENBERG, AZ
SKUNDIN, AM
DYUKKIEV, EF
KALININ, YK
SOVIET ELECTROCHEMISTRY, 1983, 19 (02): : 152 - 156

← 1 2 3 4 5 →